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BC817UPN
NPN/PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package
5 6
4
Tape loading orientation
1For calculation of R thJA please refer to Application Note Thermal Resistance
1

3 2 1
VPW09197
C1 6 B2 5 E2 4
Top View 654 W1s 123 Direction of Unreeling
Marking on SC74 package (for example W1s) corresponds to pin 1 of device
TR2 TR1
Position in tape: pin 1 opposite of feed hole side
SC74_Tape
1 E1
2 B1
3 C2
EHA07177
Type BC817UPN
Maximum Ratings Parameter
Marking 1Bs
Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 45 50 5 500 1 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 115 C Junction temperature Storage temperature
mA A mA mW C
Thermal Resistance
Junction - soldering point1)
RthJS
105
K/W
Aug-21-2002
BC817UPN
Electrical Characteristics at TA=25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V IC = 300 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat VBEsat hFE 160 100 250 400 0.7 1.2 V IEBO 100 nA ICBO 50 A ICBO 100 nA V(BR)EBO 5 V(BR)CBO 50 V(BR)CEO 45 V typ. max.
Unit
AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 pF fT 170 MHz
1) Pulse test: t < 300s; D < 2%
2
Aug-21-2002
BC817UPN
Total power dissipation Ptot = f (TS )
Collector cutoff current ICBO = f (TA )
VCB = 25V
400
mW
10 5
BC 817/818
EHP00221
CBO
nA 10 4
300
Ptot
250
10 3
max
200
150
10 2
typ
100
10 1
50
0 0
20
40
60
80
100
120 C
150
10 0
0
50
100
C TA
150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
Ptotmax / PtotDC
10
2
RthJS
10 2
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
3
Aug-21-2002
BC817UPN
Collector-emitter saturation voltage
IC = f (VCEsat ), hFE = 10
10 3
BC 817/818 EHP00223
Base-emitter saturation voltage
IC = f (VBEsat ), hFE = 10
10 3
BC 817/818 EHP00222
C
mA 150 C 25 C -50 C
C
mA 150 C 25 C -50 C
10 2 5
10 2 5
10 1 5
10 1 5
10 0 5
10 0 5
10 -1
0
0.2
0.4
0.6
V
0.8
10 -1
0
1.0
2.0
3.0
V
4.0
VCEsat
V BEsat
DC current gain hFE = f (IC )
VCE = 5V
10 3 h FE 5
BC 817/818 EHP00224
Transition frequency fT = f (IC)
VCE = 5V
10 3 fT MHz 5
BC 817/818 EHP00218
100 C 25 C -50 C
10 5
2
10 2
10 1 5
5
10 0 10 -1
10
0
10
1
10
2
mA 10
3
10 1 10 0
10 1
10 2
mA
10 3
C
C
4
Aug-21-2002

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